![SIHP11N80E-GE3 SIHP11N80E-GE3](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_AB_3_SPL.jpg)
auf Bestellung 1232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.56 EUR |
10+ | 4.68 EUR |
25+ | 4.42 EUR |
100+ | 3.78 EUR |
250+ | 3.57 EUR |
500+ | 3.38 EUR |
1000+ | 2.78 EUR |
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Technische Details SIHP11N80E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V.
Weitere Produktangebote SIHP11N80E-GE3 nach Preis ab 4.68 EUR bis 5.58 EUR
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SIHP11N80E-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP11N80E-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHP11N80E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP11N80E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |