auf Bestellung 2022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.45 EUR |
10+ | 7.09 EUR |
25+ | 6.69 EUR |
100+ | 5.74 EUR |
250+ | 5.42 EUR |
500+ | 5.1 EUR |
1000+ | 4.36 EUR |
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Technische Details SIHP105N60EF-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 29A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V.
Weitere Produktangebote SIHP105N60EF-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIHP105N60EF-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHP105N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.088 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 208W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.088ohm |
auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP105N60EF-GE3 | Hersteller : Vishay | SIHP105N60EF-GE3 |
Produkt ist nicht verfügbar |
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SIHP105N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.102Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP105N60EF-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 29A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIHP105N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.102Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |