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SIHG73N60AE-GE3 Vishay Siliconix
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Description: MOSFET N-CH 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.92 EUR |
10+ | 15.35 EUR |
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Technische Details SIHG73N60AE-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 60A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V.
Weitere Produktangebote SIHG73N60AE-GE3 nach Preis ab 10.24 EUR bis 18.09 EUR
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SIHG73N60AE-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG73N60AE-GE3 | Hersteller : Vishay |
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SIHG73N60AE-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 173A; 417W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 173A Power dissipation: 417W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 394nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG73N60AE-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 173A; 417W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 173A Power dissipation: 417W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 394nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |