auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.55 EUR |
| 10+ | 15.47 EUR |
| 25+ | 15.24 EUR |
| 50+ | 14.77 EUR |
| 100+ | 13.38 EUR |
| 250+ | 13.15 EUR |
| 500+ | 12.11 EUR |
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Technische Details SIHG70N60AEF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 60A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V.
Weitere Produktangebote SIHG70N60AEF-GE3 nach Preis ab 13.41 EUR bis 17.6 EUR
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SIHG70N60AEF-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 60A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHG70N60AEF-GE3 | Hersteller : Vishay |
EF Series Power MOSFET With Fast Body Diode |
Produkt ist nicht verfügbar |
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| SIHG70N60AEF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 173A; 417W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 173A Power dissipation: 417W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 394nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHG70N60AEF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 173A; 417W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 173A Power dissipation: 417W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 394nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |