auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21 EUR |
| 10+ | 18.52 EUR |
| 25+ | 18.13 EUR |
| 50+ | 17.62 EUR |
| 100+ | 15.91 EUR |
| 250+ | 15.63 EUR |
| 500+ | 14.5 EUR |
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Technische Details SiHG64N65E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 64A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V.
Weitere Produktangebote SiHG64N65E-GE3 nach Preis ab 15.46 EUR bis 20.28 EUR
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| SiHG64N65E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 650V 64A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG64N65E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 64A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG64N65E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 64A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SiHG64N65E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 202A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 202A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 369nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SiHG64N65E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 202A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 202A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 369nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |