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SIHG16N50C-E3 Vishay Siliconix
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Description: MOSFET N-CH 500V 16A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.02 EUR |
10+ | 4.22 EUR |
100+ | 3.41 EUR |
500+ | 3.34 EUR |
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Technische Details SIHG16N50C-E3 Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote SIHG16N50C-E3 nach Preis ab 3.5 EUR bis 7.23 EUR
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SIHG16N50C-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 713 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG16N50C-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHG16N50C-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 40A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG16N50C-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHG16N50C-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 40A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |