![SIHG100N60E-GE3 SIHG100N60E-GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4849/112_TO-247-3-AC-EP.jpg)
SIHG100N60E-GE3 Vishay Siliconix
![sihg100n60e.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.26 EUR |
10+ | 8.61 EUR |
100+ | 6.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHG100N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.
Weitere Produktangebote SIHG100N60E-GE3 nach Preis ab 5.35 EUR bis 10.33 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SIHG100N60E-GE3 | Hersteller : Vishay / Siliconix |
![]() |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SIHG100N60E-GE3 | Hersteller : Vishay |
![]() |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
SIHG100N60E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIHG100N60E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |