Technische Details SIHFUC20-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251, Mounting: THT, Case: IPAK; TO251, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 1.3A, On-state resistance: 4.4Ω, Type of transistor: N-MOSFET, Power dissipation: 42W, Kind of package: tube, Gate charge: 18nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 8A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFUC20-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHFUC20-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251 Mounting: THT Case: IPAK; TO251 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A On-state resistance: 4.4Ω Type of transistor: N-MOSFET Power dissipation: 42W Kind of package: tube Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFUC20-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
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| SIHFUC20-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251 Mounting: THT Case: IPAK; TO251 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A On-state resistance: 4.4Ω Type of transistor: N-MOSFET Power dissipation: 42W Kind of package: tube Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A |
Produkt ist nicht verfügbar |