Technische Details SIHFR9110TR-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W, Mounting: SMD, Case: DPAK; TO252, Polarisation: unipolar, On-state resistance: 1.2Ω, Type of transistor: P-MOSFET, Power dissipation: 25W, Kind of package: reel; tape, Gate charge: 8.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -12A, Drain-source voltage: -100V, Drain current: -2A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR9110TR-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFR9110TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Mounting: SMD Case: DPAK; TO252 Polarisation: unipolar On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 25W Kind of package: reel; tape Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -100V Drain current: -2A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFR9110TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Mounting: SMD Case: DPAK; TO252 Polarisation: unipolar On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 25W Kind of package: reel; tape Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -100V Drain current: -2A |
Produkt ist nicht verfügbar |