Technische Details SIHFR9024-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W, Mounting: SMD, Power dissipation: 42W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 19nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -35A, Case: DPAK; TO252, Drain-source voltage: -60V, Drain current: -5.6A, On-state resistance: 0.28Ω, Type of transistor: P-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR9024-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIHFR9024-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Mounting: SMD Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -35A Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -5.6A On-state resistance: 0.28Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
SIHFR9024-GE3 | Hersteller : Vishay / Siliconix | MOSFETs |
Produkt ist nicht verfügbar |
|
| SIHFR9024-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Mounting: SMD Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -35A Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -5.6A On-state resistance: 0.28Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |