Technische Details SIHFR9020TR-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -6.3A; Idm: -40A; 42W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -6.3A, Pulsed drain current: -40A, Power dissipation: 42W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR9020TR-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIHFR9020TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -6.3A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -6.3A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
SIHFR9020TR-GE3 | Hersteller : Vishay / Siliconix | MOSFETs |
Produkt ist nicht verfügbar |
|
| SIHFR9020TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -6.3A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -6.3A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |