Technische Details SIHFBC40L-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 3.9A, Pulsed drain current: 25A, Power dissipation: 130W, Case: I2PAK; TO262, Gate-source voltage: ±20V, On-state resistance: 1.2Ω, Mounting: THT, Gate charge: 60nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFBC40L-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIHFBC40L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 130W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFBC40L-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 130W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |