![SIDR578EP-T1-RE3 SIDR578EP-T1-RE3](https://www.mouser.com/images/vishay/lrg/PowerPAK_SO_8DC_8_DSL.jpg)
auf Bestellung 5972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.63 EUR |
10+ | 3.87 EUR |
25+ | 3.66 EUR |
100+ | 3.15 EUR |
250+ | 2.96 EUR |
500+ | 2.8 EUR |
1000+ | 2.39 EUR |
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Technische Details SIDR578EP-T1-RE3 Vishay
Description: N-CHANNEL 150 V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V.
Weitere Produktangebote SIDR578EP-T1-RE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIDR578EP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V |
Produkt ist nicht verfügbar |
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SIDR578EP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V |
Produkt ist nicht verfügbar |