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SIDC81D60E6X1SA3 Infineon Technologies
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Technische Details SIDC81D60E6X1SA3 Infineon Technologies
Description: DIODE GP 600V 200A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 200A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A, Current - Reverse Leakage @ Vr: 27 µA @ 600 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SIDC81D60E6X1SA3 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
Produkt ist nicht verfügbar |