SIDC26D60C8X1SA1 Infineon Technologies

Description: DIODE GEN PURP 600V 100A DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 100A, Supplier Device Package: Die, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100, Voltage Coupled to Current - Reverse Leakage @ Vr: 600.