SIDC08D120H8X1SA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GEN PURP 1.2KV 150A WAFER
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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Technische Details SIDC08D120H8X1SA1 Infineon Technologies
Description: DIODE GEN PURP 1.2KV 150A WAFER, Packaging: Bulk, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 150A, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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SIDC08D120H8X1SA1 | Hersteller : Infineon Technologies |
Diodes - General Purpose, Power, Switching |
Produkt ist nicht verfügbar |