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SIDC08D120F6X1SA3 Infineon Technologies


SIDC08D120F6_L4355M.pdf?folderId=db3a304412b407950112b439c9296eb9&fileId=db3a304412b407950112b439c9b76eba Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 7A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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Technische Details SIDC08D120F6X1SA3 Infineon Technologies

Description: DIODE GP 1.2KV 7A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 7A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V.

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SIDC08D120F6X1SA3 SIDC08D120F6X1SA3 Hersteller : Infineon Technologies SIDC08D120F6_L4355M.pdf?folderId=db3a304412b407950112b439c9296eb9&fileId=db3a304412b407950112b439c9b76eba Diodes - General Purpose, Power, Switching
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