SIDC06D65C8X1SA1 Infineon Technologies

Description: DIODE GEN PURP 650V 20A DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: Die, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A, Current - Reverse Leakage @ Vr: 240 nA @ 650 V.