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SICW1000N170A-BP

SICW1000N170A-BP Micro Commercial Co

SICW1000N170A(TO-247AB).pdf Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 1.32Ohm @ 1.5A, 20V
Power Dissipation (Max): 69W
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 1000 V
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.61 EUR
10+ 7.37 EUR
Mindestbestellmenge: 3
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Technische Details SICW1000N170A-BP Micro Commercial Co

Description: N-CHANNEL MOSFET,TO-247AB, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 1.32Ohm @ 1.5A, 20V, Power Dissipation (Max): 69W, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +25V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 1000 V.

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SICW1000N170A-BP SICW1000N170A-BP Hersteller : Micro Commercial Components (MCC) SICW1000N170A_TO_247AB_-3132383.pdf SiC MOSFETs N-CHANNEL MOSFET,TO-247AB
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