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SICW060N065H4-BP

SICW060N065H4-BP Micro Commercial Co


Hersteller: Micro Commercial Co
Description: SIC MOSFETS,TO-247-4
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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Technische Details SICW060N065H4-BP Micro Commercial Co

Description: SIC MOSFETS,TO-247-4, Packaging: Tape & Reel (TR), Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 20mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V.

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SICW060N065H4-BP Hersteller : Micro Commercial Components (MCC) SICW060N065H4_TO_247_4_-3483509.pdf SiC MOSFETs SIC MOSFETS,TO-247-4
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