SICW050N065H4-BP

SICW050N065H4-BP Micro Commercial Components (MCC)


SICW050N065H4_TO_247_4_-3478286.pdf Hersteller: Micro Commercial Components (MCC)
SiC MOSFETs SiC MOSFET,TO-247-4
auf Bestellung 360 Stücke:

Lieferzeit 164-168 Tag (e)
Anzahl Preis ohne MwSt
1+12.53 EUR
10+ 10.75 EUR
100+ 8.96 EUR
250+ 8.59 EUR
500+ 7.9 EUR
1000+ 7.11 EUR
1800+ 6.79 EUR
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Technische Details SICW050N065H4-BP Micro Commercial Components (MCC)

Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 20mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V.

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SICW050N065H4-BP Hersteller : Micro Commercial Components 650V 60A/250W(Tc) TO-247-465mR@20V TYP/2.6Vth TYP/Cis:1850pF
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SICW050N065H4-BP SICW050N065H4-BP Hersteller : Micro Commercial Co Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
Produkt ist nicht verfügbar