SICW028N120A4-BP Micro Commercial Components (MCC)
auf Bestellung 360 Stücke:
Lieferzeit 217-221 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.57 EUR |
10+ | 31.61 EUR |
25+ | 29.48 EUR |
50+ | 28.56 EUR |
100+ | 27.65 EUR |
250+ | 25.8 EUR |
500+ | 23.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SICW028N120A4-BP Micro Commercial Components (MCC)
Description: MOSFET N-CH 1200 V 80A TO247-4, Packaging: Tape & Reel (TR), Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 16V, 20V, Vgs (Max): +22V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V.
Weitere Produktangebote SICW028N120A4-BP
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SICW028N120A4-BP | Hersteller : Micro Commercial Components | SIC MOSFETS N-CHANNELMOSFET TO-247-4 |
Produkt ist nicht verfügbar |
||
SICW028N120A4-BP | Hersteller : Micro Commercial Co |
Description: MOSFET N-CH 1200 V 80A TO247-4 Packaging: Tape & Reel (TR) Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 15mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 16V, 20V Vgs (Max): +22V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V |
Produkt ist nicht verfügbar |