SIA913DJ-T1-GE3
Hersteller:
auf Bestellung 2700 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA913DJ-T1-GE3
Description: MOSFET 2P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6.5W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual.
Weitere Produktangebote SIA913DJ-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SIA913DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.5W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
Produkt ist nicht verfügbar |