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SI9407BDY-T1-E3 Vishay Siliconix
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Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.91 EUR |
5000+ | 0.86 EUR |
12500+ | 0.82 EUR |
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Technische Details SI9407BDY-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V.
Weitere Produktangebote SI9407BDY-T1-E3 nach Preis ab 0.6 EUR bis 2.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI9407BDY-T1-E3 | Hersteller : Vishay |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Hersteller : Vishay |
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auf Bestellung 1176 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Hersteller : Vishay |
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auf Bestellung 1176 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 83379 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 19355 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9407BDY-T1-E3 Produktcode: 183584 |
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SI9407BDY-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI9407BDY-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI9407BDY-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |