![SI8489EDB-T2-E1 SI8489EDB-T2-E1](https://www.mouser.com/images/vishay/lrg/MicroFoot_4_SPL.jpg)
SI8489EDB-T2-E1 Vishay Semiconductors
auf Bestellung 15584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.74 EUR |
10+ | 0.57 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.28 EUR |
3000+ | 0.24 EUR |
9000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI8489EDB-T2-E1 Vishay Semiconductors
Description: MOSFET P-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V.
Weitere Produktangebote SI8489EDB-T2-E1 nach Preis ab 0.28 EUR bis 0.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI8489EDB-T2-E1 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V |
auf Bestellung 4861 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
SI8489EDB-T2-E1 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
SI8489EDB-T2-E1 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
SI8489EDB-T2-E1 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||
SI8489EDB-T2-E1 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar |
Produkt ist nicht verfügbar |