![SI8441DB-T2-E1 SI8441DB-T2-E1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2525/6-MICRO FOOT Si8499DB.jpg)
SI8441DB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: MOSFET P-CH 20V 10.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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Technische Details SI8441DB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 20V 10.5A 6MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.
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SI8441DB-T2-E1 | Hersteller : Vishay / Siliconix | MOSFET 80mohm @ 4.5V |
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