Technische Details SI8401DB-T1-E3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A, Technology: TrenchFET®, Mounting: SMD, Case: MICROFOOT® 1.6x1.6, Kind of package: reel; tape, Kind of channel: enhanced, Power dissipation: 2.77W, On-state resistance: 95mΩ, Pulsed drain current: -10A, Drain current: -4.9A, Polarisation: unipolar, Gate charge: 17nC, Drain-source voltage: -20V, Gate-source voltage: ±12V, Type of transistor: P-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI8401DB-T1-E3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI8401DB-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 95mΩ Pulsed drain current: -10A Drain current: -4.9A Polarisation: unipolar Gate charge: 17nC Drain-source voltage: -20V Gate-source voltage: ±12V Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8401DB-T1-E3 | Hersteller : Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI8401DB-T1-E3 | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |
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SI8401DB-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 95mΩ Pulsed drain current: -10A Drain current: -4.9A Polarisation: unipolar Gate charge: 17nC Drain-source voltage: -20V Gate-source voltage: ±12V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |