SI7904BDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7904BDN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 17.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7904BDN-T1-GE3 nach Preis ab 0.81 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7904BDN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 20V Vds 8V Vgs PowerPAK 1212-8 |
auf Bestellung 36507 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SI7904BDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 17.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 5805 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| SI7904BDN-T1-GE3 |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
 |
SI7904BDN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SI7904BDN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SI7904BDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SI7904BDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |