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SI7904BDN-T1-E3 Vishay Siliconix
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Description: MOSFET 2N-CH 20V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.06 EUR |
11+ | 1.68 EUR |
100+ | 1.31 EUR |
500+ | 1.11 EUR |
1000+ | 0.9 EUR |
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Technische Details SI7904BDN-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 17.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7904BDN-T1-E3 nach Preis ab 0.89 EUR bis 2.13 EUR
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SI7904BDN-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 3446 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7904BDN-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 168 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7904BDN-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI7904BDN-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7904BDN-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 17.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
Produkt ist nicht verfügbar |
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SI7904BDN-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |