![SI7892BDP-T1-E3 SI7892BDP-T1-E3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742%3B5881%3BDP%3B8.jpg)
SI7892BDP-T1-E3 Vishay Siliconix
![si7892bd.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7892BDP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V.
Weitere Produktangebote SI7892BDP-T1-E3 nach Preis ab 0.82 EUR bis 3.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI7892BDP-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SI7892BDP-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SI7892BDP-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
auf Bestellung 8905 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SI7892BDP-T1-E3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 5264 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
SI7892BDP-T1-E3 | Hersteller : VISHAY |
![]() |
auf Bestellung 8043 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
![]() |
SI7892BDP-T1-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |