SI7884BDP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.42 EUR |
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Technische Details SI7884BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V.
Weitere Produktangebote SI7884BDP-T1-GE3 nach Preis ab 0.97 EUR bis 3.15 EUR
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SI7884BDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
auf Bestellung 1259 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7884BDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
auf Bestellung 1259 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7884BDP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V 58A 46W 7.5mohm @ 10V |
auf Bestellung 9561 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7884BDP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V |
auf Bestellung 5555 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7884BDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7884BDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SI7884BDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Pulsed drain current: 50A Power dissipation: 46W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7884BDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Pulsed drain current: 50A Power dissipation: 46W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |