SI7810DN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.97 EUR |
| 6000+ | 0.92 EUR |
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Technische Details SI7810DN-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V.
Weitere Produktangebote SI7810DN-T1-E3 nach Preis ab 1.03 EUR bis 2.38 EUR
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SI7810DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 3.4A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V |
auf Bestellung 8948 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7810DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 59558 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7810DN-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 630 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7810DN-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 1658 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7810DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.4A; Idm: 20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Power dissipation: 3.8W Polarisation: unipolar Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 5.4A On-state resistance: 84mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7810DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 5.4A; Idm: 20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Power dissipation: 3.8W Polarisation: unipolar Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 5.4A On-state resistance: 84mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |