SI7629DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.72 EUR |
| 6000+ | 0.68 EUR |
| 9000+ | 0.65 EUR |
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Technische Details SI7629DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V.
Weitere Produktangebote SI7629DN-T1-GE3 nach Preis ab 0.68 EUR bis 1.75 EUR
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SI7629DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V |
auf Bestellung 24057 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7629DN-T1-GE3 | Hersteller : Vishay Semiconductors |
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SI7629DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R |
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SI7629DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R |
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| SI7629DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7629DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |