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SI7489DP-T1-E3

SI7489DP-T1-E3 Vishay Siliconix


si7489dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 42000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.87 EUR
6000+ 1.8 EUR
9000+ 1.74 EUR
Mindestbestellmenge: 3000
Produktrezensionen
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Technische Details SI7489DP-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 100V 28A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V, Power Dissipation (Max): 5.2W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V.

Weitere Produktangebote SI7489DP-T1-E3 nach Preis ab 1.88 EUR bis 4.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI7489DP-T1-E3 SI7489DP-T1-E3 Hersteller : Vishay si7489dp.pdf Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+2.51 EUR
Mindestbestellmenge: 3000
SI7489DP-T1-E3 SI7489DP-T1-E3 Hersteller : Vishay Siliconix si7489dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 47024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.15 EUR
10+ 3.45 EUR
100+ 2.74 EUR
500+ 2.32 EUR
1000+ 1.97 EUR
Mindestbestellmenge: 5
SI7489DP-T1-E3 SI7489DP-T1-E3 Hersteller : Vishay Semiconductors si7489dp.pdf MOSFETs -100V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 22671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.19 EUR
10+ 3.43 EUR
100+ 2.78 EUR
250+ 2.71 EUR
500+ 2.36 EUR
1000+ 1.99 EUR
3000+ 1.88 EUR
SI7489DP-T1-E3 SI7489DP-T1-E3 Hersteller : Vishay si7489dp.pdf Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
SI7489DP-T1-E3 Hersteller : VISHAY si7489dp.pdf 09+
auf Bestellung 518 Stücke:
Lieferzeit 21-28 Tag (e)
SI7489DP-T1-E3 SI7489DP-T1-E3 Hersteller : Vishay si7489dp.pdf Trans MOSFET P-CH 100V 28A 8-Pin PowerPAK SO T/R
Produkt ist nicht verfügbar
SI7489DP-T1-E3 Hersteller : VISHAY si7489dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -28A; Idm: -40A
Mounting: SMD
Drain-source voltage: -100V
Drain current: -28A
On-state resistance: 47mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: PowerPAK® SO8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7489DP-T1-E3 Hersteller : VISHAY si7489dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -28A; Idm: -40A
Mounting: SMD
Drain-source voltage: -100V
Drain current: -28A
On-state resistance: 47mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: PowerPAK® SO8
Produkt ist nicht verfügbar