SI7478DP-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 7600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.09 EUR |
| 6000+ | 2.01 EUR |
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Technische Details SI7478DP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V.
Weitere Produktangebote SI7478DP-T1-E3 nach Preis ab 2.25 EUR bis 5.42 EUR
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SI7478DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 15A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V |
auf Bestellung 11771 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7478DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7478DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 60A; 1.2W Power dissipation: 1.2W Mounting: SMD Kind of package: reel; tape Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7478DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 60A; 1.2W Power dissipation: 1.2W Mounting: SMD Kind of package: reel; tape Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |