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SI7463ADP-T1-GE3 Vishay Siliconix
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Description: MOSFET P-CH 40V 46A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.83 EUR |
6000+ | 0.79 EUR |
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Technische Details SI7463ADP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 46A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V.
Weitere Produktangebote SI7463ADP-T1-GE3 nach Preis ab 0.79 EUR bis 2.01 EUR
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SI7463ADP-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 40417 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7463ADP-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V |
auf Bestellung 8610 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7463ADP-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7463ADP-T1-GE3 Produktcode: 176105 |
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Produkt ist nicht verfügbar
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SI7463ADP-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W Case: PowerPAK® SO8 Drain-source voltage: -40V Drain current: -46A On-state resistance: 10mΩ Type of transistor: P-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 144nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7463ADP-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W Case: PowerPAK® SO8 Drain-source voltage: -40V Drain current: -46A On-state resistance: 10mΩ Type of transistor: P-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 144nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD |
Produkt ist nicht verfügbar |