SI7414DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.09 EUR |
6000+ | 1.05 EUR |
9000+ | 1.02 EUR |
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Technische Details SI7414DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V.
Weitere Produktangebote SI7414DN-T1-GE3 nach Preis ab 1.15 EUR bis 2.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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SI7414DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 5.6A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
auf Bestellung 11123 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7414DN-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 49368 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7414DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI7414DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.021 ohm, 1212, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 1.5 Transistormontage: Oberflächenmontage Kanaltyp: n-Kanal Wandlerpolarität: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.021 rohsPhthalatesCompliant: YES Qualifikation: - Betriebstemperatur, max.: 150 usEccn: EAR99 Produktpalette: PW Series SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7414DN-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 5.6A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7414DN-T1-GE3 |
auf Bestellung 25500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7414DN-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 5.6A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SI7414DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.7A; Idm: 30A Kind of package: reel; tape Drain-source voltage: 60V Drain current: 8.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: PowerPAK® 1212-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI7414DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.7A; Idm: 30A Kind of package: reel; tape Drain-source voltage: 60V Drain current: 8.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |