Produkte > VISHAY SILICONIX > SI7322DN-T1-E3
SI7322DN-T1-E3

SI7322DN-T1-E3 Vishay Siliconix


si7322dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.11 EUR
6000+ 1.06 EUR
9000+ 1.01 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI7322DN-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 100V 18A PPAK 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V.

Weitere Produktangebote SI7322DN-T1-E3 nach Preis ab 1.16 EUR bis 2.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI7322DN-T1-E3 SI7322DN-T1-E3 Hersteller : Vishay Siliconix si7322dn.pdf Description: MOSFET N-CH 100V 18A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
auf Bestellung 19137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.68 EUR
10+ 2.19 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 7
SI7322DN-T1-E3 SI7322DN-T1-E3 Hersteller : Vishay Semiconductors si7322dn.pdf MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 77593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.69 EUR
10+ 2.22 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
3000+ 1.16 EUR
Mindestbestellmenge: 2
SI7322DN-T1-E3 Hersteller : Vishay / Siliconix si7322dn-240991.pdf MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 2589 Stücke:
Lieferzeit 10-14 Tag (e)