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auf Bestellung 2792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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220+ | 0.71 EUR |
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Technische Details SI7308DN-T1-GE3 Vishay
Description: MOSFET N-CH 60V 6A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V.
Weitere Produktangebote SI7308DN-T1-GE3 nach Preis ab 0.55 EUR bis 1.85 EUR
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SI7308DN-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7308DN-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7308DN-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 2792 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7308DN-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 36250 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7308DN-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V |
auf Bestellung 4696 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7308DN-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI7308DN-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI7308DN-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 20A Power dissipation: 12.7W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7308DN-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 20A; 12.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 20A Power dissipation: 12.7W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |