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SI7220DN-T1-GE3

SI7220DN-T1-GE3 Vishay Siliconix

73117.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.42 EUR
6000+ 1.37 EUR
Mindestbestellmenge: 3000
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Technische Details SI7220DN-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 60V 3.4A 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.

Weitere Produktangebote SI7220DN-T1-GE3 nach Preis ab 1.25 EUR bis 3.12 EUR

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SI7220DN-T1-GE3 SI7220DN-T1-GE3 Hersteller : Vishay Semiconductors 73117.pdf MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 31948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.78 EUR
10+ 2.31 EUR
100+ 1.85 EUR
250+ 1.7 EUR
500+ 1.54 EUR
1000+ 1.32 EUR
3000+ 1.25 EUR
Mindestbestellmenge: 2
SI7220DN-T1-GE3 SI7220DN-T1-GE3 Hersteller : Vishay Siliconix 73117.pdf Description: MOSFET 2N-CH 60V 3.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 70939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.12 EUR
10+ 2.79 EUR
100+ 2.24 EUR
500+ 1.84 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 6
SI7220DN-T1-GE3 Hersteller : VISHAY 73117.pdf SI7220DN-T1-GE3 SMD N channel transistors
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