SI5936DU-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 10.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |
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Technische Details SI5936DU-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 10.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® ChipFet Dual, Part Status: Active.
Weitere Produktangebote SI5936DU-T1-GE3 nach Preis ab 0.44 EUR bis 1.05 EUR
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SI5936DU-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A PPAK CHIPFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 10.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® ChipFet Dual Part Status: Active |
auf Bestellung 6640 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5936DU-T1-GE3 | Hersteller : Vishay Semiconductors |
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Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK ChipFET T/R |
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| SI5936DU-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 25A Power dissipation: 10.4W Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5936DU-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 25A Power dissipation: 10.4W Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |