SI5499DC-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 8V 6A 1206-8 CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V
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Technische Details SI5499DC-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V.
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SI5499DC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V |
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