Produkte > VISHAY SEMICONDUCTORS > SI5459DU-T1-GE3
SI5459DU-T1-GE3

SI5459DU-T1-GE3 Vishay Semiconductors

si5459du.pdf Hersteller: Vishay Semiconductors
MOSFET -20V Vds 12V Vgs PowerPAK ChipFET
auf Bestellung 32154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.97 EUR
10+ 0.83 EUR
100+ 0.58 EUR
500+ 0.48 EUR
1000+ 0.41 EUR
3000+ 0.35 EUR
6000+ 0.33 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details SI5459DU-T1-GE3 Vishay Semiconductors

Description: MOSFET P-CH 20V 8A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Single, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® ChipFET™ Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V.

Weitere Produktangebote SI5459DU-T1-GE3 nach Preis ab 0.57 EUR bis 1.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI5459DU-T1-GE3 SI5459DU-T1-GE3 Hersteller : Vishay Siliconix si5459du.pdf Description: MOSFET P-CH 20V 8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
auf Bestellung 901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.95 EUR
100+ 0.72 EUR
500+ 0.57 EUR
Mindestbestellmenge: 17
SI5459DU-T1-GE3 Hersteller : VISHAY si5459du.pdf SI5459DU-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI5459DU-T1-GE3 SI5459DU-T1-GE3 Hersteller : Vishay Siliconix si5459du.pdf Description: MOSFET P-CH 20V 8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
Produkt ist nicht verfügbar