Technische Details SI4947ADY-T1-GE3 Vishay
Description: MOSFET 2P-CH 30V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote SI4947ADY-T1-GE3
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SI4947ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4947ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |