Technische Details SI4943BDY-T1-GE3 Vishay
Description: MOSFET 2P-CH 20V 6.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.3A, Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4943BDY-T1-GE3
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SI4943BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4943BDY-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 20V 8.4A 2.0W 19mohm @ 10V |
Produkt ist nicht verfügbar |