SI4936BDY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.62 EUR |
| 5000+ | 0.59 EUR |
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Technische Details SI4936BDY-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.9A, Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4936BDY-T1-E3 nach Preis ab 0.63 EUR bis 1.51 EUR
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SI4936BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R |
auf Bestellung 1876 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4936BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30 Volt 6.9 Amp 2.8W |
auf Bestellung 23301 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4936BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 10641 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4936BDY-T1-E3 Produktcode: 169655 |
IC > IC Transistoranordnungen |
Produkt ist nicht verfügbar
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SI4936BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4936BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4936BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Pulsed drain current: 30A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4936BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Pulsed drain current: 30A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |