Technische Details SI4835BDYT1E3 VISHAY
Description: MOSFET P-CH 30V 7.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V.
Weitere Produktangebote SI4835BDYT1E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI4835BDY-T1-E3 | Hersteller : VISHAY | 0702+ |
auf Bestellung 1162 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4835BDY-T1-E3 | Hersteller : VISHAY | 08+ SOP-8 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4835BDY-T1-E3 Produktcode: 27600 |
Transistoren > Transistoren P-Kanal-Feld |
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SI4835BDY-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI4835BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 7.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4835BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 7.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4835BDY-T1-E3 | Hersteller : Vishay / Siliconix |
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Produkt ist nicht verfügbar |