Technische Details SI4542DY ON Semiconductor
Description: MOSFET N/P-CH 30V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote SI4542DY
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4542DY | Hersteller : ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6/-6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±30V On-state resistance: 48/51mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI4542DY | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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SI4542DY | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4542DY | Hersteller : Vishay / Siliconix |
MOSFET 30V 6.9/6.1A 2W |
Produkt ist nicht verfügbar |
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SI4542DY | Hersteller : onsemi / Fairchild |
MOSFET SO8 SINGLE NCH/PCH |
Produkt ist nicht verfügbar |
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SI4542DY | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6/-6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±30V On-state resistance: 48/51mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |