SI4534DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 60V 6.2A/8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.89 EUR |
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Technische Details SI4534DY-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 60V 6.2A/8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 3.6W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4534DY-T1-GE3 nach Preis ab 0.99 EUR bis 2.27 EUR
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SI4534DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 60V 6.2A/3A 8-Pin SO T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4534DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 60V 6.2A/8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 3.6W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 10040 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4534DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 60V 6.2A/3A 8-Pin SO T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4534DY-T1-GE3 | Hersteller : Vishay |
Vishay |
Produkt ist nicht verfügbar |