auf Bestellung 4192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
100+ | 1.55 EUR |
105+ | 1.42 EUR |
118+ | 1.22 EUR |
200+ | 1.12 EUR |
500+ | 1.07 EUR |
1000+ | 0.96 EUR |
2000+ | 0.9 EUR |
2500+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4465ADY-T1-GE3 Vishay
Description: MOSFET P-CH 8V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V, Power Dissipation (Max): 3W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V.
Weitere Produktangebote SI4465ADY-T1-GE3 nach Preis ab 0.98 EUR bis 3.06 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI4465ADY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 2123 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 2123 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V |
auf Bestellung 9561 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V |
auf Bestellung 2121 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -13.7A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
SI4465ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -13.7A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |